Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab9e7c/pdf
Reference41 articles.
1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
3. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
4. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
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