Analysis of deep levels inn‐type GaN by transient capacitance methods
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357144
Reference15 articles.
1. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
2. Electrical properties of n-type vapor-grown gallium nitride
3. Electron transport mechanism in gallium nitride
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