Electrical characterization of metal-semiconductor-metal structure of pseudomorphic InGaN on GaN: Simulation and experiments-Reference-Cited by-同舟云学术

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Electrical characterization of metal-semiconductor-metal structure of pseudomorphic InGaN on GaN: Simulation and experiments

Published:2016-02-16 Issue:6 Volume:213 Page:1602-1609
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ohsawa Jun¹

Affiliation:

1. Toyota Technological Institute; 2-12 Hisakata Tempaku-ku Nagoya 468-8511 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Current transport in metal-semiconductor-metal (MSM) structures

2. Transit-time limited frequency response of InGaAs MSM photodetectors

3. Double-peaked decay of transient photocurrents in GaAs metal–semiconductor–metal photodetectors

4. D. S. Malhi J. M. Xu F. Hegmann B. Takasaki R. Surridge Adam Hilger Toronto 1990 451 456

5. Semiconductor ultraviolet detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures;Microelectronics International;2021-07-08

2. In 0.15 Ga 0.85 N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH 3;Journal of Crystal Growth;2018-05

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