In 0.15 Ga 0.85 N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH 3-Reference-Cited by-同舟云学术

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In 0.15 Ga 0.85 N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH 3

Published:2018-05 Issue: Volume:489 Page:31-35
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Hongxia,Zhang Xiaohan,Wang Hailong,Lv Zesheng,Li Yongxian,Li Bin,Yan Huan,Qiu Xinjia,Jiang Hao

Funder

Guangdong Science and Technology Major Project of Guang-dong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Transient electron transport in wurtzite GaN, InN, and AlN

2. Unusual properties of the fundamental band gap of InN

3. Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N

4. Electrical characterization of metal-semiconductor-metal structure of pseudomorphic InGaN on GaN: Simulation and experiments

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1. Modulate the work function of MXene in MXene/InGaN heterojunction for visible light photodetector;Applied Physics Letters;2024-07-01

2. Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias;IEEE Electron Device Letters;2024-03

3. High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate;Applied Physics Letters;2023-07-31

4. Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection;Journal of Alloys and Compounds;2023-05

5. Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond;Advanced Optical Materials;2023-04-07

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