Deep level defects in n-type GaN grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121016
Reference12 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors
3. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
4. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
5. Progress and prospects of group-III nitride semiconductors
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