Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1915513
Reference16 articles.
1. The silicon-silicon dioxide system: Its microstructure and imperfections
2. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
3. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
4. Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2interface
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1. Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control;AIP Advances;2016-10
2. Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor;Applied Physics Letters;2013-06-10
3. Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics;Journal of The Electrochemical Society;2010
4. Density Functional Theory of High-k Dielectric Gate Stacks;Nanoelectronics and Photonics;2008
5. Bipolar Charge Trapping Induced Anomalous Negative Bias-Temperature Instability in HfSiON Gate Dielectric pMOSFETs;IEEE Transactions on Device and Materials Reliability;2007-12
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