Bipolar Charge Trapping Induced Anomalous Negative Bias-Temperature Instability in HfSiON Gate Dielectric pMOSFETs-Reference-Cited by-同舟云学术

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Bipolar Charge Trapping Induced Anomalous Negative Bias-Temperature Instability in HfSiON Gate Dielectric pMOSFETs

Published:2007-12 Issue:4 Volume:7 Page:518-523
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Tang Chun-Jung,Ma Huan-Chi,Wang Tahui,Chan Chien-Tai,Chang Chih-Sheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/4403236/04374083.pdf?arnumber=4374083

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress;Chinese Physics B;2014-11

2. Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions;2009 IEEE International Reliability Physics Symposium;2009

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