Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor-Reference-Cited by-同舟云学术

Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Published:2013-06-10 Issue:23 Volume:102 Page:232909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lim Han Jin,Kim Youngkuk,Sang Jeon In,Yeo Jaehyun,Im Badro,Hong Soojin,Kim Bong-Hyun,Nam Seok-Woo,Kang Ho-kyu,Jung E. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811274

Reference12 articles.

1. Review on high-k dielectrics reliability issues

2. Charge Trapping at Deep States in Hf–Silicate Based High-κ Gate Dielectrics

3. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

4. Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

5. Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

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