Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.4218/fulltext
Reference67 articles.
1. An overview of radiation-induced interface traps in MOS structures
2. Relationship between trapped holes and interface states in MOS capacitors
3. Hot‐electron‐induced defects at the Si‐SiO2interface at high fields at 295 and 77 K
4. Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
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