Relationship between trapped holes and interface states in MOS capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91557
Reference9 articles.
1. Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing
2. Vacuum Ultraviolet Radiation Effects in SiO2
3. Comparison of interface‐state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation
4. Impact ionization model for dielectric instability and breakdown
Cited by 110 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Research of Hot Carrier Degradation of Submicron n-channel LDD MOSFETs under Static and Quasi-static Stress Conditions;2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus);2022-01-25
2. First-principles calculations of the hole-induced depassivation of the SiO2/Si interface defects;Chinese Physics B;2021-11-01
3. Effect of external electric field on hydrogen-related defect in amorphous silica;Materials Today Communications;2020-12
4. Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices;Defects in Microelectronic Materials and Devices;2008-11-19
5. Oxide Traps, Border Traps, and Interface Traps in SiO2;Defects in Microelectronic Materials and Devices;2008-11-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3