Research of Hot Carrier Degradation of Submicron n-channel LDD MOSFETs under Static and Quasi-static Stress Conditions-Reference-Cited by-同舟云学术

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Research of Hot Carrier Degradation of Submicron n-channel LDD MOSFETs under Static and Quasi-static Stress Conditions

Published:2022-01-25 Issue: Volume: Page:
ISSN:
Container-title:2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus)
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Author:

Eliseeva Daria A.¹

Affiliation:

1. National Research University of Electronic Technology,Department of Integrated Electronics and Microsystems,Moscow,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9755448/9755449/09755650.pdf?arnumber=9755650

Reference10 articles.

1. Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

2. Increased Hot-Carrier Degradation of NMOSFETs Under Very Fast Transient Stressing

3. two-stage hot-carrier degradation and its impact on submicrometer ldd nmosfet lifetime prediction;chan;IEEE Transactions on Electron Devices,1995

4. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

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