Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage-Reference-Cited by-同舟云学术

Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage

Published:2024-03 Issue:1 Volume:24 Page:123-128
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Chen Yanning¹^ORCID,Wang Kai²,Shao Jin¹,Liu Fang¹,Yang Xinhuan³^ORCID,Zhang Jianyu⁴,Sang Qianqian³^ORCID,Wang Chuanzheng⁵,Zhao Yuanfu⁵

Affiliation:

1. Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Company Ltd., Beijing, China

2. Beijing Chip Identification Technology Company Ltd., Beijing, China

3. School of Electronic Information, Hangzhou Dianzi University, Hangzhou, China

4. School of Integrated Circuits, Peking University, Beijing, China

5. Faculty of Electronic Information, Hangzhou Dianzi University, Hangzhou, China

Funder

Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Company Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10463650/10415873.pdf?arnumber=10415873

Reference27 articles.

1. Investigation of Hot-Carrier Degradation in 0.18-$\mu$ m MOSFETs for the Evaluation of Device Lifetime and Digital Circuit Performance

2. Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating

3. Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory

4. Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

5. Effect of Reverse Body Bias on Hot Carrier Induced Degradation of n-MOSFETs

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