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Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating

  • Published:2020-05 Issue:5 Volume:67 Page:2208-2212
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Gupta CharuORCID,Gupta AnshulORCID,Vega Reinaldo A.,Hook Terence B.,Dixit AbhisekORCID

Funder

DST-SERB, Government of India, through the Research and Development Project

Visvesvaraya PhDScheme of Ministry of Electronics & Information Technology, Government of India, being implemented by Digital India Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

2. Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs;IEEE Transactions on Electron Devices;2023-12

3. Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

4. Device-Level Thermal Management in Multifin SOI-FinFET Through Fin Pitch Design Employing Cooperative Game Theory;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-06

5. Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs;IEEE Electron Device Letters;2022-11
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