Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/8655/00381994.pdf?arnumber=381994
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD;IEEE Transactions on Electron Devices;2024-01
2. Modeling of Channel Hot Electron Degradation in n-MOSFETs;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
3. Modeling of Classical Channel Hot Electron Degradation in n-MOSFETs Using TCAD;IEEE Transactions on Electron Devices;2022-07
4. Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
5. Research of Hot Carrier Degradation of Submicron n-channel LDD MOSFETs under Static and Quasi-static Stress Conditions;2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus);2022-01-25
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