Hot‐electron‐induced defects at the Si‐SiO2interface at high fields at 295 and 77 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335222
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5. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
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