Charge centers induced in thermal SiO2 films by high electric field stress at 80 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350414
Reference27 articles.
1. Reliability of thin SiO2
2. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
3. A Comparison of Positive Charge Generation in High Field Stressing and Ionizing Radiation on MOS Structures
4. Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films
5. Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2
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