1. Internal photoemission in GaAs/(AlxGa1−x) As heterostructures;Abstreiter;Physica B & C,1985
2. Internal photoemission—A suitable method for determining band offsets in semiconductor heterostructures;Abstreiter;Surface Science,1986
3. Determination of the band gap of a thermal oxide on silicon;Adamchuk;Soviet Physics-Solid State,1984
4. Barrier energy determination at the semiconductor-insulator interface;Adamchuk;Soviet Journal of Physics, Chemistry, and Mechanics of Surfaces,1985
5. Effect of hole scattering on their capture by the traps near Si−SiO2 interface;Adamchuk;Soviet Journal of Physics, Chemistry, and Mechanics of Surfaces,1988