Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS-Reference-Cited by-同舟云学术

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Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

Published:2007-04 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual
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Author:

Liu Ziyuan,Fujieda Shinji,Hayashi Fumihiko,Shimizu Masakuni,Nakata Masashi,Ishigaki Hirokazu,Wilde Markus,Fukutani Katsuyuki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4227591/4227592/04227632.pdf?arnumber=4227632

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen detection near surfaces and shallow interfaces with resonant nuclear reaction analysis;Surface Science Reports;2014-12

2. Characterization and Understanding of High Valued Polysilicon Resistor Resistance Variation Across a Resistor Bank With Parallel Resistor Fingers;IEEE Transactions on Semiconductor Manufacturing;2014-05

3. Current Understanding of the Transport Behavior of Hydrogen Species in MOS Stacks and Their Relation to Reliability Degradation;ECS Transactions;2011-04-25

4. Indications for an ideal interface structure of oxynitride tunnel dielectrics;2009 IEEE International Reliability Physics Symposium;2009-04

5. Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories;2008 IEEE International Reliability Physics Symposium;2008-04

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