Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329919
Reference28 articles.
1. Tunneling in thin MOS structures
2. Resonance effects observed at the onset of Fowler-Nordheim tunneling in thin MOS structures
3. Oscillations in MOS tunneling
4. Experimental Observations of the Chemistry of the SiO2/Si Interface
5. High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface
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