Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing-Reference-Cited by-同舟云学术

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Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing

Published:1999-01 Issue:1 Volume:85 Page:551-557
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kimura Shinjiro,Ikoma Hideaki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369488

Reference16 articles.

1. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

2. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications

3. Scaling Down MNOS Nonvolatile Memory Devices

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1. Thrust Measurements of a Radio Frequency Plasma Source;Journal of Propulsion and Power;2013-05

2. Thrust Measurements of a Helicon Plasma Source;47th AIAA/ASME/SAE/ASEE Joint Propulsion Conference & Exhibit;2011-07-31

3. Static states and dynamic behaviour of charges: observation and control by scanning probe microscopy;Journal of Physics: Condensed Matter;2010-03-29

4. Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide;Semiconductors;2007-03

5. Visible electroluminescence in hydrogenated amorphous silicon oxynitride;Journal of Applied Physics;2001-09

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