Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332019
Reference34 articles.
1. Effects of ionizing radiation on oxidized silicon surfaces and planar devices
2. Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing
3. Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures
4. Optically induced injection of hot electrons into SiO2
5. Avalanche Injection of Holes into SiO2
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