Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics-Reference-Cited by-同舟云学术

Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Published:2010 Issue:5 Volume:157 Page:G121
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Jung Hyung-Suk,Kim Hyo Kyeom,Kim Jeong Hwan,Won Seok-Jun,Cho Deok-Yong,Lee Joohwi,Lee Sang Young,Hwang Cheol Seong,Park Jung-Min,Kim Weon-Hong,Song Min-Woo,Lee Nae-In,Heo Sung

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode

2. Application of HfSiON as a gate dielectric material

3. Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate

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