Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate-Reference-Cited by-同舟云学术

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Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate

Published:2002-11-04 Issue:19 Volume:81 Page:3630-3632
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cho Moonju,Park Jaehoo,Park Hong Bae,Hwang Cheol Seong,Jeong Jaehack,Hyun Kwang Soo,Kim Young-Wug,Oh Chang-Bong,Kang Hee-Sung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1520333

Reference5 articles.

1. High dielectric constant Hf–Sn–Ti–O thin films

2. Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing

3. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

4. Chemical Vapor Deposition of HfO[sub 2] Thin Films Using a Novel Carbon-Free Precursor: Characterization of the Interface with the Silicon Substrate

5. Stability of zirconium silicate films on Si under vacuum and O2 annealing

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4. High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO2 thin films;Applied Physics A;2015-03-08

5. Thermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-01

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