Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene-Reference-Cited by-同舟云学术

Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene

Published:2020 Issue:4 Volume:8 Page:1344-1352
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Sungmin¹²³⁴,Park Bo-Eun¹²³⁴,Yoon Hwi¹²³⁴,Lee Sanghun¹²³⁴,Nam Taewook¹²³⁴^ORCID,Cheon Taehoon⁵⁶⁷⁴,Kim Soo-Hyun⁵⁶⁷⁴,Cheon Hwansung⁸⁹¹⁰⁴,Im Sangkyun⁸⁹¹⁰⁴,Seong Taegeun⁸⁹¹⁰⁴,Kim Hyungjun¹²³⁴^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering

2. Yonsei University

3. Seoul

4. Korea

5. School of Materials Science and Engineering

6. Yeungnam University

7. Gyeongsan-si 712-749

8. Electronic Materials Business

9. Samsung SDI

10. Suwon-si

Abstract

Theoretical and experimental studies were investigated on the growth characteristics and electrical properties of HfO₂ films using Hf(N(CH₃)₂)₄ and CpHf(N(CH₃)₂)₃.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC05778A

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