Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition-Reference-Cited by-同舟云学术

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Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition

Published:2024-08 Issue: Volume:40 Page:109735
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Choi Yoona,Lee Ae Jin,Park Jongwook,Oh Hansol,Park Yongjoo,Jeon Woojin

Publisher

Elsevier BV

Reference31 articles.

1. Emerging applications for high K materials in VLSI technology;Clark;Mater. (Basel),2014

2. Band offsets of wide-band-gap oxides and implications.pdf;Robertson;J. Vac. Sci. Technol. B,2000

3. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004

4. Structural and dielectric properties of crystalline and amorphous ZrO 2;Vanderbilt;Thin Solid Films,2005

5. Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics;Kil;Dig. Tech. Pap. Symp. VLSI Technol.,2006

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