Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2723074
Reference11 articles.
1. Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates
2. A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack
3. Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
4. Electrical properties of high-k HfO2 films on Si1−xGex substrates
5. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
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3. Band bending analysis of charge characteristics at GeO2/Ge interface by x-ray photoemission spectroscopy;Journal of Physics D: Applied Physics;2018-11-15
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