Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks-Reference-Cited by-同舟云学术

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Published:2005-07 Issue:21-23 Volume:351 Page:1902-1905
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Houssa M.,De Jaeger B.,Delabie A.,Van Elshocht S.,Afanas’ev V.V.,Autran J.L.,Stesmans A.,Meuris M.,Heyns M.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

2. Electrical characterization of germanium p-channel MOSFETs

3. IEDM Tech. Dig.;Ritenour,2003

4. IEDM Tech. Dig.;Rahman,2003

5. IEDM Tech. Dig.;Low,2003

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1. Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels;ECS Transactions;2019-12-18

2. (Invited) Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-k Oxides on High Mobility Channels;ECS Transactions;2019-12-17

3. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates;Materials;2015-12-02

4. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack;ECS Transactions;2014-08-12

5. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods;Journal of Physics: Conference Series;2013-03-01

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