Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates-Reference-Cited by-同舟云学术

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Published:2015-12-02 Issue:12 Volume:8 Page:8169-8182
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Lu Qifeng,Mu Yifei,Roberts Joseph,Althobaiti Mohammed,Dhanak Vinod^ORCID,Wu Jingjin,Zhao Chun,Zhao Ce,Zhang Qian,Yang Li,Mitrovic Ivona,Taylor Stephen,Chalker Paul

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/8/12/5454/pdf

Reference42 articles.

1. High performance germanium MOSFETs

2. High-k/Ge MOSFETs for future nanoelectronics

3. Germanium Based Field-Effect Transistors: Challenges and Opportunities

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