Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide-Reference-Cited by-同舟云学术

Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide

Published:2024-05 Issue:5 Volume:71 Page:3285-3292
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jhang Wun-Ciang¹^ORCID,Hsieh Tsung-Chun¹,Zhang Xuan-Zhi¹,Qiu Zi-Rong¹,Hsu Chih-Chieh¹^ORCID,Joodaki Mojtaba²^ORCID

Affiliation:

1. Graduate School of Engineering Science and Technology and the Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, Taiwan

2. School of Computer Science and Engineering, Constructor University, Bremen, Germany

Funder

National Science and Technology Council, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10488109.pdf?arnumber=10488109

Reference48 articles.

1. Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications

2. Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell

3. Coexistence of Nonvolatile WORM, Bipolar, Unipolar, and Volatile Resistive Switching Characteristics in a Dry Oxide Layer With Ag Conductive Bridges

4. Development of indigo-based nonvolatile write-once-read-many-times memory device

5. Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes

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