Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell

Author:

Lata Lalit Kumar,Jain Praveen K.,Chand Umesh,Bhatia Deepak,Shariq Mohammad

Publisher

Elsevier BV

Subject

General Medicine

Reference22 articles.

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3. S. Ikegawa, F. Mancoff, J. Janesky and S. Aggarwal, “Magnetoresistive Random Access Memory: Present and Future”,IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1407-1419, 2020. Available: 10.1109/ted.2020.2965403.

4. H. Ishiwara, “Ferroelectric Random Access Memories”,Journal of Nanoscience and Nanotechnology, vol. 12, no. 10, pp. 7619-7627, 2012. Available: 10.1166/jnn.2012.6651.

5. Advances in Non-Volatile Memory and Storage Technology;Bersuker,2019

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