Design of RRAM with high storage capacity and high reliability for IoT applications-Reference-Cited by-同舟云学术

Design of RRAM with high storage capacity and high reliability for IoT applications

Published:2022-08 Issue: Volume:194 Page:108292
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang Jianjian,Ji Lanlong,Bi Jinshun,Liu Mengxin,Xi Kai,Majumdar Sandip,Mehmood Safdar

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

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2. A 28 nm Full-margin, High-reliability, and Ultra-low-power Consumption Sense Amplifier for STT-MRAM;Zheng;Microelectron Reliab,2019

3. Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design;Chen;IEEE Trans Electron Devices,2015

4. The Impact of X-Ray and Proton Irradiation on HfO2/Hf-Based Bipolar Resistive Memories;Bi;IEEE Trans Nucl Sci,2013

5. Total Ionization Dose and Single Event Effects of a Commercial Stand-Alone 4 Mb Resistive Random Access Memories (ReRAM);Bi;Microelectron Reliab,2019

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