Al2O3 barrier layer for enhancing UV to visible rejection ratio in p-Si/n-MgZnO heterojunction visible blind UV photodetectors-Reference-Cited by-同舟云学术

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Al2O3 barrier layer for enhancing UV to visible rejection ratio in p-Si/n-MgZnO heterojunction visible blind UV photodetectors

Published:2023-08 Issue: Volume:663 Page:415021
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Chetia S.K.,K. Das Amit,Ajimsha R.S.,Singh R.^ORCID,S Padhi P.^ORCID,Misra P.

Funder

Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India

Department of Atomic Energy, Government of India

Homi Bhabha National Institute

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. n-ZnO∕LaAlO3∕p-Si heterojunction for visible-blind UV detection;Tasi;Opt. Lett.,2012

2. Effect of substrate surface atom constitution and the migration characteristics of reactive atoms on crystal structure of MgxZn1–xO thin films deposited by PLD method;Han;J. Phys. Chem. C,2016

3. Mechanism of excellent photoelectric characteristics in mixed-phase ZnMgO ultraviolet photodetectors with single cut-off wavelength;Fan;ACS Appl. Mater. Interfaces,2015

4. Recent progress in solar-blind deep-ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors;Xie;Adv. Funct. Mater.,2019

5. Gallium oxide solar-blind ultraviolet photodetector: a Review;Xu;J. Mater. Chem. C,2019

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1. Structural and interface band alignment properties of transparent p-type α-GaCrO3:Ni/α-Al2O3 heterojunction;Journal of Applied Physics;2024-07-10

2. Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio;Materials Today Chemistry;2024-06

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4. Optical properties of prussian blue thin films and electrical characteristics of Ag/prussian blue/p-Si/Al photodetectors for low-optical power latch-switching applications;Optical Materials;2024-05

5. Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection;ACS Applied Electronic Materials;2024-04-04

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