Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer-Reference-Cited by-同舟云学术

Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer

Published:2013-07 Issue: Volume:540 Page:261-265
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zou Xiao,Fang Guojia,Qin Pingli,Wang Hongjiu,Song Zengcai,Wang Haoning,Long Hao,Wan Qing

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

3. Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

4. High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

5. Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

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1. Characterization of MIS structures and thin film transistors using RF-sputtered HfO 2 /HIZO layers;Microelectronics Reliability;2017-08

2. Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics;Journal of Alloys and Compounds;2016-09