High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability-Reference-Cited by-同舟云学术

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High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

Published:2010-02 Issue:2 Volume:31 Page:144-146
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shinhyuk Yang ,Doo-Hee Cho ,Min Ki Ryu ,Sang-Hee Ko Park ,Chi-Sun Hwang ,Jin Jang ,Jae Kyeong Jeong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5399050/05357439.pdf?arnumber=5357439

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3. Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films;Crystals;2023-08-28

4. Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors;ACS Applied Electronic Materials;2023-05-16

5. Homojunction structure amorphous oxide thin film transistors with ultra-high mobility;Journal of Semiconductors;2023-05-01

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