Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3554747
Reference14 articles.
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3. Proceedings of the Ninth International Conference on the Physics of Semiconductors;Adams M. J.,1968
4. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
5. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
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