Strong quantum-confined Stark effect in germanium quantum-well structures on silicon-Reference-Cited by-同舟云学术

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Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

Published:2005-10 Issue:7063 Volume:437 Page:1334-1336
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Kuo Yu-Hsuan,Lee Yong Kyu,Ge Yangsi,Ren Shen,Roth Jonathan E.,Kamins Theodore I.,Miller David A. B.,Harris James S.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/nature04204.pdf

Reference28 articles.

1. Miller, D. A. B. Rationale and challenges for optical interconnects to electronic chips. Proc. IEEE 88, 728–749 (2000)

2. Liu, A. et al. A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor. Nature 427, 615–618 (2004)

3. Xu, Q., Schmidt, B., Pradhan, S. & Lipson, M. Micrometre-scale silicon electro-optic modulator. Nature 435, 325–327 (2005)

4. Soref, R. A. & Bennett, B. R. Electrooptical effects in silicon. IEEE J. Quant. Electron. 23, 123–129 (1987)

5. Miller, D. A. B. et al. Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect. Phys. Rev. Lett. 53, 2173–2176 (1984)

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