Band structure critical point energy in germanium–tin alloys with high tin contents
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
2. Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003, USA
Funder
Air Force Office of Scientific Research
Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0064358
Reference42 articles.
1. Si–Ge–Sn alloys: From growth to applications
2. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
3. Achieving direct band gap in germanium through integration of Sn alloying and external strain
4. The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications
5. Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE
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