The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications
Author:
Funder
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4757414
Reference28 articles.
1. Electronic properties calculation of Ge1−x−ySixSny ternary alloy and nanostructure
2. Nanosynthesis of Si-Ge-Sn Semiconductors and Devices via Purpose-built Hydride Compounds
3. Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)
4. Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms
5. Direct absorption edge in GeSiSn alloys
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