Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Jaipur, Rajasthan, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/10198840/10161711.pdf?arnumber=10161711
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3. GeSn technology: Extending the Ge electronics roadmap
4. High-responsivity photodetector using a grating-gate MOSFET in the 0.8-µm standard CMOS process
5. High-performance Ge-on-Si photodetectors
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2. Performance assessment of a new optimized Junctionless SiSn MOSFET;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25
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