Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms-Reference-Cited by-同舟云学术

Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

Published:2010-05-27 Issue:12 Volume:22 Page:3779-3789
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Xie Junqi¹,Chizmeshya Andrew V. G.¹,Tolle John¹,D’Costa Vijay R.²,Menendez Jose²,Kouvetakis John¹

Affiliation:

1. Department of Chemistry and Biochemistry

2. Department of Physics

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm100915q

Reference25 articles.

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3. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

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