Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Author:

Chang ChiaoORCID,Cheng Hung-Hsiang,Sevison Gary A.,Hendrickson Joshua R.ORCID,Li Zairui,Agha Imad,Mathews Jay,Soref Richard A.,Sun Greg

Abstract

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Funder

United States Air Force Office of Scientific Research

Publisher

MDPI AG

Subject

General Materials Science

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