Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference23 articles.
1. Silicon-based silicon–germanium–tin heterostructure photonics
2. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
3. Structural and optical characteristics of Ge_1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers
4. Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
5. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
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