Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3238327
Reference14 articles.
1. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
2. High-quality Ge epilayers on Si with low threading-dislocation densities
3. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
4. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures
5. Ge–Sn semiconductors for band-gap and lattice engineering
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