Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121162
Reference11 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Heterojunction bipolar transistors using Si-Ge alloys
3. GeSi/Si Nanostructures
4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
5. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
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