Modeling of lasing threshold in GeSn waveguides
Author:
Affiliation:
1. University of Dayton,Department of Physics,Dayton,OH,USA
2. Morehouse College,Department of Physics,Atlanta,GA,USA
Funder
Air Force Office of Scientific Research Young Investigator Award
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9858122/9858126/09858207.pdf?arnumber=9858207
Reference11 articles.
1. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
2. Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
3. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
4. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
5. Room temperature emission spectroscopy of GeSn waveguides under optical pumping
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