Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection-Reference-Cited by-同舟云学术

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Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection

Published:2016-02-23 Issue:5 Volume:24 Page:4519
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Pham Thach,Du Wei,Tran Huong,Margetis Joe,Tolle John,Sun Greg,Soref Richard A.,Naseem Hameed A.,Li Baohua,Yu Shui-Qing

Funder

Air Force Office of Scientific Research (AFOSR)

Asian Office of Aerospace Research and Development

Defense Advanced Research Projects Agency (DARPA)

National Science Foundation (NSF)

Small Business Innovation Research (SBIR)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference29 articles.

1. Infrared detectors: an overview

2. Progress in focal plane array technologies

3. Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices

4. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

5. Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

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1. Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

3. GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting;Journal of Vacuum Science & Technology B;2024-07-01

4. CMOS-compatible Self-powered Short-wave Infrared Imagers Based on GeSn Photodetector Arrays;ACS Photonics;2024-06-12

5. Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding;IEEE Electron Device Letters;2024-06

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