Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff-Reference-Cited by-同舟云学术

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Published:2014-12 Issue:22 Volume:105 Page:221117
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Conley Benjamin R.¹,Margetis Joe²,Du Wei¹,Tran Huong¹^ORCID,Mosleh Aboozar¹,Ghetmiri Seyed Amir¹^ORCID,Tolle John²,Sun Greg³,Soref Richard³,Li Baohua⁴,Naseem Hameed A.¹,Yu Shui-Qing¹

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA

3. The Engineering Program, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

4. Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, Arkansas 72701, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Defense Advanced Research Projects Agency (DARPA)

Small Business Innovation Research (SBIR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903540

Reference25 articles.

1. Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

2. Reduced Pressure CVD Growth of Ge and Ge1−xSnxAlloys

3. Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

4. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

5. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

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