Temperature-Dependent Characteristics of GeSn Waveguide <i>p-i-n</i> Photodetectors: Step Towards Cryogenic Silicon Photonics-Reference-Cited by-同舟云学术

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Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics

Published:2025-01 Issue:1: SiGeSn Infrared Photon. Volume:31 Page:1-12
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Bansal Radhika¹^ORCID,Jheng Yue-Tong¹,Lee Kuo-Chih²,Wen Shuyu³^ORCID,Berencén Yonder³^ORCID,Cheng Hung-Hsiang²,Chang Guo-En¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi, Taiwan

2. Center for Condensed Matter Sciences, and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

Funder

National Science and Technology Council

Young Scholar Fellowship Program

CHIST-ERA grant

Taiwan Semiconductor Research Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/2944/10663286/10504562.pdf?arnumber=10504562

Reference49 articles.

1. Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

2. GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics

3. High-speed silicon modulators for the 2 μm wavelength band

4. GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band

5. Time to Open the 2-μm Window?

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