GeSn Waveguide Photodetectors with Vertical <i>p–i–n</i> Heterostructure for Integrated Photonics in the 2 μm Wavelength Band-Reference-Cited by-同舟云学术

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GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band

Published:2022-07 Issue:7 Volume:3 Page:2270018
ISSN:2699-9293
Container-title:Advanced Photonics Research
language:en
Short-container-title:Advanced Photonics Research

Author:

Liu Cheng-Hsun¹,Bansal Radhika²,Wu Chen-Wei¹,Jheng Yue-Tong²,Chang Guo-En²^ORCID

Affiliation:

1. Graduate Institute of Opto-Mechatronics National Chung Cheng University No. 168, Section 1, University Road Minhsiung Township Chiayi County 62102 Taiwan

2. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI) National Chung Cheng University No. 168, Section 1, University Road Minhsiung Township Chiayi County 62102 Taiwan

Publisher

Wiley

Subject

Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adpr.202270018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. High-performance Ge photodetectors on silicon photonics platform for optical interconnect;Sensors and Actuators A: Physical;2024-10

3. Performance analysis of a new Mid-Infrared phototransistor based on combined graded band gap GeSn sensitive-film and IGZO TFT platform;Micro and Nanostructures;2023-01

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