GeSn Vertical Heterostructure <i>p-i-n</i> Waveguide Light Emitting Diode for 2 <i>μ</i>m Band Silicon Photonics-Reference-Cited by-同舟云学术

GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics

Published:2023-03 Issue:3 Volume:44 Page:364-367
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bansal Radhika¹^ORCID,Jheng Yue-Tong¹,Lee Kuo-Chih²,Cheng H. H.²,Chang Guo-En¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi, Taiwan

2. Center for Condensed Matter Sciences, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei City, Taiwan

Funder

Ministry of Science and Technology of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10016467.pdf?arnumber=10016467

Reference30 articles.

1. Electrically Injected GeSn Vertical-Cavity Surface Emitters on Silicon-on-Insulator Platforms

2. Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

3. GeSn waveguide photodetectors with vertical p–i–n heterostructure for integrated photonics in the 2 ?m wavelength band;liu;Adv Photon Res,2022

4. Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

5. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

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